Optical detectors are used for the detection of light in the UV, visible and down to near IR regions. The penetration depth of such radiation into silicon is very small. Therefore, the optical entrance window must be carefully designed to ensure that carriers generated in the volume close to the surface are being detected.

SINTEF MiNaLab has investigated designated processes for thin dead layers, enabling detection very close to the detector surface. We are manufacturing UV detector chips which are used in commercially available projects by OSI Optoelectronics.

Published January 7, 2008

Example of OSIO detector for deep UV (193nm) applications. The chips where manufactured at SINTEF.